Creating a stable high resistance sub-5 nm nanogap in between conductive electrodes is one of the major challenges in the device fabrication of nano-objects. Gap-sizes of 20 nm and above can be fabricated reproducibly by the precise focusing of the ion beam and careful milling of the metallic lines. Here, by tuning ion dosages starting from 4.6 x 10(10) ions/cm and above, reproducible nanogaps with sub-5 nm sizes are milled with focused ion beam. The resistance as a function of gap dimension shows an exponential behavior, and Fowler-Nordheim tunneling effect was observed in nanoelectrodes with sub-5 nm nanogaps. The application of Simmon's model to the milled nanogaps and the electrical analysis indicates that the minimum nanogap size approaches to 2.3 nm.
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机译：在导电电极之间形成稳定的高电阻亚5 nm纳米间隙是纳米物体器件制造中的主要挑战之一。通过离子束的精确聚焦和金属线的仔细研磨，可再现地制造20 nm及以上的间隙尺寸。在这里，通过调整从4.6 x 10（10）离子/ cm或更高的离子剂量开始，将小于5 nm的可再现纳米间隙与聚焦离子束一起研磨。电阻作为间隙尺寸的函数显示出指数行为，并且在具有5nm以下纳米间隙的纳米电极中观察到Fowler-Nordheim隧穿效应。 Simmon模型在研磨后的纳米间隙中的应用和电分析表明，最小纳米间隙尺寸接近2.3 nm。
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